IPW65R150CFDFKSA1 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

• Маркировка
  IPW65R150CFDFKSA1
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPW65R150CFDFKSA1 Configuration: Single Continuous Drain Current: 22.4 A Drain-source Breakdown Voltage: 700 V Fall Time: 5.6 ns Gate Charge Qg: 86 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-247 Power Dissipation: 195.3 W Resistance Drain-source Rds (on): 135 mOhms Rise Time: 7.6 ns Rohs: yes Transistor Polarity: N-Channel RoHS: yes Drain-Source Breakdown Voltage: 700 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 135 mOhms
• Количество страниц
  20 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  2,90 MB

IPW65R150CFDFKSA1 datasheet скачать

IPW65R150CFDFKSA1 datasheet